Low noise, low power consumption high electron mobility transistors amplifier, for temperatures below 1 K

Abstract

Low noise three-stage pseudomorphic high electron mobility field-effect transistors amplifier were designed for the temperature range below 1 K. A minimum noise temperature TN≈100 mK was measured at an ambient temperature of about 380 mK at frequencies between 1 and 4 MHz for a source resistance of 10 kΩ. The gain of the amplifier was 50 at a power consumption of about 200 μW. The noise parameters of the amplifier are stable to within 30%, for a power consumption in the range of 100–300 μW. Minimum voltage spectral noise density of the amplifier with respect to the input is about 200 pV/Hz1/2 and the corner frequency of the 1/f noise is close to 300 kHz.