Abstract
A metal-reactive oxide-silicon carbide (SiC) sensor, responding to oxygen gas, was fabricated using a LaxCe1-xOz layer deposited between 4H-SiC substrate and Al gate as a function of postdeposition annealing (PDA) of the oxide layer from 400 to 1000°C. Sensitivity of the sensor increased with increasing of the PDA temperature. Current-time and current-gate voltage response was investigated in ultralow voltage regime under a forward bias of 0.3 V to study sensitivity of the sensor. Sensing mechanism of the sensor toward the oxygen gas was proposed and discussed.
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