Abstract
ZnO nanorod arrays have been synthesized on silicon substrate covered withZnO film by thermal evaporation of zinc particles at a low temperature of550 °C. Their field emission has been investigated: the turn-on electric field (at the current density of1 µA cm−2) isabout 3.8 V µm−1, and the threshold electric field (at the current density of1 mA cm−2) is6.3 V µm−1 at the workingdistance of 100 µm. In comparison, the turn-on and threshold electric fields ofthe not well-aligned ZnO nanorod arrays and ZnO film are 9.8,15.8 V µm−1 and13.7, 26.0 V µm−1 at 100 µm, respectively. These behaviors indicate that such an ultralow threshold field emission isattributed to the aligned structure, the good electric contact with the conducting substratewhere they grow, and weaker field-screening effect. Our results demonstrate thatwell-aligned nanorod arrays with excellent field-emission performance grown at such a lowtemperature can provide the possibility of application in glass-sealed flat panel displays.
Published Version
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