Abstract
The passivation effects of AlOx films were investigated for p-type crystalline Si (c-Si) solar cells. The AlOx films were deposited on 10 Ωcm c-Si substrates by catalytic chemical vapor deposition (Cat-CVD) using tri-methyl aluminum (TMA) and O 2 at a film temperature of 230 °C. The surface recombination velocity (S 0) at the AlOx/Si interface was measured to be below 0.5 cm/s for AlOx films deposited with O 2/TMA gas flow-rate ratios of 15–35. This ultra low S 0 was achieved primarily by band bending due to the negative interface fixed-charge density (N f) of an order of 10 12 charges/cm 2. The decrease in interface trapping density D it in the negative fixed charge region assists in decreasing S 0.
Published Version
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