Abstract
The authors report ultralow specific contact resistivity (ρc) in nonalloyed, in situ Ohmic contacts to heavily doped n-type In0.53Ga0.47As:Si layers with 6×1019cm−3 active carrier concentration, lattice matched to InP. The contacts were formed by depositing molybdenum (Mo) immediately after the In0.53Ga0.47As growth without breaking vacuum. Transmission line model measurements showed a contact resistivity of (1.1±0.6)×10−8Ωcm2 for the Mo∕InGaAs interface. The contacts show no observable degradation in resistivity after annealing at 300 and 400°C for 1min duration.
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