Abstract
This paper presents a Tb/Ni/TiN stack that can act as a metallic contact for n‐In0.53Ga0.47As layer with lower specific contact resistivity. Tb/Ni/TiN layers are deposited sequentially on n‐In0.53Ga0.47As via sputtering and Ni(Tb)‐InGaAs alloy is formed using rapid thermal annealing. The ultralow specific contact resistivity (ρc) of 7.98 × 10−9 Ω cm2 is obtained between Ni(Tb)‐InGaAs and n‐In0.53Ga0.47As layers, which is more than two orders of magnitude lower than that of a control sample with a Ni/TiN stack. The increased dopant concentration in the Ni‐InGaAs alloy and the lowered barrier height between Ni‐InGaAs and n‐In0.53Ga0.47As are considered to be possible reasons for the improved contact resistance. The Tb/Ni/TiN stack is promising as a metallic contact for metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) based on n‐In0.53Ga0.47As layer.
Published Version
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