Abstract
A bakeable, sputter-ion pumped ultra-high-vacuum system capable of in situ residual gas analyses before, during, and after the deposition of thin films by evaporation, sputtering or sublimation has been constructed. The system is readily modified, capable of rapid sample changes and daily cycling from atmospheric to pressures below 10 −10 torr. Thin films of various metals, semiconductors and compound materials have been grown. The nature of the residual background gases under various vacuum conditions has been determined with a partial pressure analyzer. Initial results on the pumping background of gases during film growth by getter sputtering are also presented.
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