Ultrahigh-Q photonic crystal nanocavities based on 4H silicon carbide

Abstract

Photonic nanocavities with high quality (Q) factors are essential components for integrated optical circuits. The use of crystalline silicon carbide (SiC) for such nanocavities enables the realization of devices with superior properties. We fabricate ultrahigh-Q SiC photonic crystal nanocavities by etching air holes into a 4H-SiC slab that is prepared without using hydrogen ion implantation, which usually causes higher absorption losses. In addition, compared to usual designs, a relatively thin slab is utilized to avoid losses through cross-polarized mode coupling induced by the tapered air holes. We obtain a heterostructure nanocavity with a high experimental Q factor of 6.3×105, which is 16 times larger than the highest Q among the previously reported values for nanocavities based on crystalline SiC. We also show that our nanocavity exhibits a high normalized second-harmonic conversion efficiency of 1900%/W.