Abstract
A multiline beam continuous-wave laser lateral crystallization (MLB-CLC) method was developed to realize a predominantly (100)-oriented polycrystalline silicon (poly-Si) film with a high biaxial tensile strain. Low-temperature poly-Si (LTPS) thin film transistors (TFTs) with an ultrahigh maximum electron field effect mobility of 1010 cm2 V−1 s−1 were realized. The correlation between the performance and microscopic crystallinity of the TFTs was investigated. The performance enhancement of TFTs brings about highly (100)-surface-oriented large Si crystallites with a high biaxial tensile strain and grain boundaries being parallel to the current flow.
Published Version
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