Abstract
Benefiting from the dragging effect of yttrium, an ultrahigh overall-performance phase-change memory is reported, including low resistance drift, high data retention, low power consumption, fast operating speed, and good cycling endurance.
Full Text
Sign-in/Register to access full text options
Published version (Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have