Abstract
Ultrahigh frequency rf-SQUID magnetometer employing a cryogenic preamplifier and a commercially available thin film rf-SQUID sensor have been designed, manufactured, and tested. The system has been operated at 316 MHz, which is the maximum pump frequency accepted by the thin film sensor. The cryogenic preamplifier has been built around a microwave high-electron-mobility transistor which was made unconditionally stable at ultrahigh frequency band by means of an appropriate circuit design, namely, a cascode configuration. The total flux noise of the magnetometer has been found to be 8.4 × 10−6Φ0/√Hz at 4.2 K and 5.8× 10−6Φ0/√Hz at 1.4 K. The temperature dependence of the fractional step rise α of the current-voltage rf characteristic has been measured to be proportional to the 2/3 power of the SQUID sensor temperature. The noise performance of the system at 4.2 K has been limited by the intrinsic SQUID noise only, in good agreement with theoretical predictions.
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