Abstract
Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g(-1) is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.
Highlights
Transient electronics represents a class of devices where a trigger can be used to dissolve or destroy a device and any information it contains
We demonstrate the first design for a transient energy storage electrode material that is integrated seamlessly into silicon material that can dually function for either transient or non-transient silicon-based electronics
By combining the native transient properties of porous silicon with the controlled gradient coatings of active materials using atomic layer deposition, our work highlights the capability to achieve stable energy storage (>20 F g−1) until a trigger is applied, which deactivates the energy storage function in a matter of seconds, with full dissolution occurring within 30 minutes
Summary
Transient electronics represents a class of devices where a trigger can be used to dissolve or destroy a device and any information it contains. We demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon.
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