Abstract
A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast and moderately sensitive detector capable to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present the first detector of this kind. The detector element is a GaAs-based field effect transistor operated at room temperature. THz detection is successfully demonstrated at frequencies up to 4.9 THz. The THz detection time constant is shorter than 30 ps, the optical time constant is 150 ps. This detector is ideally suited for precise, simultaneous resolution of optical and THz pulses and for pulse characterization of high-power THz pulses up to tens of kW peak power levels. The dynamic range of the detector is as large as 65±3dB/Hz, enabling applications in a large variety of experiments and setups, also including table-top systems.
Highlights
Progress in Terahertz (THz) research (100 GHz-10 THz) has yet reached a technological level that is attractive for a huge variety of experiments and real-life applications
The radiation resistance of such structures is considerably lower than that of antenna coupled devices. This leads to a lower detection voltage which is required for detecting the extremely high power levels of free electron lasers (FEL) in order to prevent non-linear response of the device
large area field effect transistor (LA-field effect transistors (FETs)) were sucessfully tested from 0.24 THz to 4.9 THz
Summary
Progress in Terahertz (THz) research (100 GHz-10 THz) has yet reached a technological level that is attractive for a huge variety of experiments and real-life applications. The requirement of strong fields is based on the nature of these experiments: The THz electric field must be comparable to the (built-in) static electric fields of a sample under test, and modifying the physics beyond a simple perturbation For such experiments, high power THz facilities are used, such as free electron lasers (FEL). The results were obtained at the free electron laser FELBE (Helmholtz-Zentrum Dresden-Rossendorf) with a FEL pulse duration below 33 ps and read out electronics permitting measurements up to a bandwidth of 30 GHz. Remarkably, a single detector covers an extremely large frequency span from the low end of the THz band up to at least 5 THz. the detection scheme is designed for high power applications, the noise floor should be low enough to permit applications in (lower power) table top systems.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
