Abstract
We have fabricated and characterized ultrafast metal-semiconductor-metal photodetectors based on low-temperature-grown (LT) GaN. The photodetector devices exhibit up to 200kV∕cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4-ps-wide electrical transients using 360-nm-wavelength and 100-fs-duration laser pulses, that is corresponding to the carrier lifetime of 720fs in our LT GaN material.
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