Abstract
The broadenings of the E1 and E1+Δ1 interband critical points can be understood as lifetime effects due to the ultrafast relaxation of the photoexcited hot holes. The contributions to these broadenings arising from the electrons in the conduction band are small, as intervalley scattering times are rather long. We have measured such broadenings in Si, Ge, α-tin, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb with spectroscopic ellipsometry and compare them with calculations based on the deformation potential-type electron-phonon interaction in the rigid pseudo-ion approximation.
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