Abstract
ABSTRACTPicosecond Raman spectroscopy has been employed to study electron-phonon interactions in the wide bandgap semiconductor GaN. An ultraviolet picosecond laser with photon energy ћω= 4.36eV was used to excite electron-hole pairs in an undoped bulk GaN. The relaxation of these high energy electrons and holes were used to interrogate electron-phonon interactions. We have found that electrons thermalize toward the bottom of the conduction band by emitting primarily longitudinal optical phonons. Our work demonstrates that the Fröhlich interaction is much stronger than the deformation potential interaction in wurtzite GaN.
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