Abstract
We describe multiwavelength pump probe characterization of an inhomogeneously broadened semiconductor nanostructure gain medium. An InAs/InP quantum-dash optical amplifier is perturbed by a 100 fs pulse and the response is measured at wavelengths outside the homogeneously broadened spectral region. Energy dependent carrier cross relaxation as well as capture and escape processes are investigated and quantified.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
