Ultrafast characterization of an in-plane gate transistor integrated with photoconductive switches

Abstract

An in-plane gate field-effect transistor is characterized by ultrafast electro-optic sampling. The transistor is monolithically integrated with photoconductive switches in coplanar waveguide and <0.5 ps measurement time resolution is achieved. The gate-drain capacitance of the transistor is obtained as 1.8 fF at zero drain voltage from displacement current transients. The gate-drain capacitance is dominated by parasitic capacitance and the intrinsic gate-drain capacitance is estimated as less than 0.2 fF.