Si single-electron transistors with in-plane point-contact metal gates

Abstract

We report on the operation of Si single-electron transistors with in-plane point-contact metal gates. These in-plane gates are fabricated by a self-aligned process, which are used to squeeze the channel and to form a single dot at the constriction of the channel. The characteristics of such single-electron transistors strongly depend on the channel width and the voltage of the in-plane gates. A few dips are observed at the less positive gate voltages for a device with a 70 nm wide channel. Applying negative voltages to the in-plane gates leads to the formation of a single dot in the conducting channel. These in-plane gates facilitate fabricating Si single-electron transistors with single dot structures.