Abstract
Dynamics of photoexcited carriers in Er-doped GaAs (GaAs:Er) and Er,O-codoped GaAs (GaAs:Er,O) have been systematically investigated by means of a pump and probe technique. A characteristic ps-scale relaxation was clearly observed in transient reflectance (d R/ R) and transmission (d T/ T) curves. The relaxation was due to the trapping of photoexcited carriers by an Er-related trap, which was closely related to efficiency of Er 3+ luminescence.
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