Abstract

Dynamics of photo-excited carriers in Er,O-codoped GaAs have been systematically investigated by means of a pump and probe reflection technique. Time-resolved reflectivity exhibited an abrupt increase in amplitude, followed by a steep decrease to negative in less than 1 ps and then a gradual recovery. There were two components, fast and slow, in the recovery process. The fast recovery depended strongly on Er concentration and measurement temperature. The quantitative analysis indicated that the fast recovery corresponds to electron capture by a trap formed by Er and O codoping.

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