Abstract
The recombination lifetime in CdSx Se1−x semiconductor-doped glass was measured by time-resolved photoluminescence. It was found that long-term exposure of the glass to high-intensity laser pulses produced a permanent reduction of the free-carrier lifetime from 80 ps to less than 10 ps. This change could be reversed by thermal annealing and should have applications to ultrafast optical signal processing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
