Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550\u2009nm

Hui Long,Longhui Zeng,Shu Ping Lau,Huiyu Yuan,Yanyong Li,Di Wu,Wei Lu,Shenghuang Lin,Zhenhua Lou,Yuen Hong Tsang

doi:10.1038/s41427-018-0035-4

Abstract

The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe2 have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe2 photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe2 films by simple selenization method for the design of a PtSe2/Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 × 1013 Jones at −5 V and fast rise/fall times of 10.1/19.5 μs at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe2 with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe2/Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices.

Highlights

Photodetectors (PDs), one of the most important types of optoelectronic devices, can covert incident light into an electrical signal[1]
Significant efforts have been focused on the development of broadband PDs based on quantum dots[5], inorganic nanomembranes[6] and organic perovskite[7], but these developed devices are still limited by a slow response speed and relatively short detection range
The long-term stability of a photodetector remains an important concern for the device reliability, so we investigated the air stability of the PtSe2/silicon nanowire array (SiNWA) device by repeating the performance test after storing the

Summary

Introduction

Photodetectors (PDs), one of the most important types of optoelectronic devices, can covert incident light into an electrical signal[1]. They have received considerable research interest, as this technology is essential for a variety of industrial and scientific applications and has a large impact on our daily lives. Significant efforts have been focused on the development of broadband PDs based on quantum dots[5], inorganic nanomembranes[6] and organic perovskite[7], but these developed devices are still limited by a slow response speed and relatively short detection range.

Methods

Results

Conclusion