Ultrafast Accelerated Retention Test Methodology for RRAM Using Micro Thermal Stage

Abstract

We proposed an ultrafast accelerated retention test methodology for resistive random access memory (RRAM) using micro thermal stage (MTS). For accelerated retention test using chuck heating, the two major factors that limit the test speed are the attainable temperature range and thermal time constant. To extend these limits, we built MTS with extended temperature range (~800 °C) and short thermal time constant ( $\sim 10\mu \text{s}$ ). Using high resistance state retention failure of HfOx-based RRAM as an example, we demonstrated that the proposed methodology can reduce accelerated retention test time to <10 ms, achieving a boost of up to six orders of magnitude compared with chuck heating.