Abstract
An ultrawideband polarization rotator (PR) with low insertion loss (IL) based on silicon on insulator (SOI) platform is proposed. The input TM0 / TE0-polarized modes can be rotated 90 deg simultaneous using a 45-deg W-slot dual-stair waveguide with varied width. Simulation results show that with a PR in length of 4.3 μm, the IL is below 0.4 (0.42) dB and polarization extinction ratio (PER) is over 17 (16) dB for TE0-to-TM0 (TM0-to-TE0) mode conversion within bandwidth of 300 nm (from 1400 to1700 nm), which covers optical fiber communication S-, C-, L-, and U-bands. In addition, the fabrication tolerance is analyzed numerically. The proposed PR has excellent performance with compact footprint and will find potential application in large-scale high-performance PICs.
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