Abstract
In this paper, we report preliminary results for a novel optical intensity modulator employing metal oxide semi-conductor (MOS) phase shifter having metal gate instead of poly-silicon gate. The phase shifter is junction-less and uses different work function metal for electrodes. A Mach-Zehnder Modulator (MZM) based on this MOS phase shifter is realized on silicon on insulator (SOI) platform having 220 nm device layer thickness. As the proposed modulator does not use any embedded PN or PIN phase-shifter, it offers high speed operation along with negligible power consumption. Numerical simulations are performed to estimate the performance of the modulator using commercially available TCAD and mode solver tools. Results indicate that the modulator offers ∼ 11.5 dB of extinction ratio (ER) and very low insertion loss (IL) of ∼ 0.2 dB when the MOS phase shifter has a length of 300 μm and v π equal to 4.3 V. The transient analysis confirms the device operating speed up to ∼ 21 GHz, with a 3-dB bandwidth of −7.3 GHz.
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