Abstract
SOI (Silicon on Insulator) based photonic devices, including stimulated emission from Si diode, RCE (Resonant Cavity Enhanced) photodiode with quantum structure, MOS (Metal Oxide Semiconductor) optical modulator with high frequency, SOI optical matrix switch and wavelength tunable filter are reviewed in the paper. The emphasis will be played on our recent results of SOI-based thermo-optic waveguide matrix switch with low insertion loss and fast response. A folding re-arrangeable non-blocking 4×4 matrix switch with total internal reflection (TIR) mirrors and a first blocking 16×16 matrix were fabricated on SOI wafer. The extinction ratio and the crosstalk are better. The insertion loss and the polarization dependent loss (PDL) at 1.55 μm increase slightly with longer device length and more bend and intersecting waveguides. The insertion losses are expected to decrease 2~3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 μs and 2.3 μs, respectively.
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