Ultra‐wideband complementary metal‐oxide semiconductor low noise amplifier using CS‐CG noise‐cancellation and dual resonance network techniques

Abstract

In this paper, a low power ultra-wideband (UWB) low noise amplifier (LNA) with high and flat voltage gain is proposed using CS-CG noise-cancellation and dual resonance network techniques based on TSMC 180 nm technology. The CS-CG noise cancellation technique reduced the noise figure in 3-10.6 GHz frequency band, and the dual resonance network technique is applied to reach an acceptable input matching. In order to reduce the number of inductors, the active inductor is used in the noise cancellation stage. Also, to control voltage gain and input return loss, a resistor is connected in parallel to channel length modulation resistance of the transistor in the first stage. The developed LNA circuit provides a high and flat voltage gain of 12.75 dB with 0.65 dB variation, which is the result of using two stages common-source topology. An average noise figure of 2 dB, with its maximum value of 2.3 dB, an IIP3 of -8 dBm are obtained from 3 to 10.6 GHz, respectively. The obtained input and output matching value are better than -10 dB. The layout of proposed LNA occupies an area of 0.55 mm2 including ring pad and this structure consumes 11.56 mW from 1-V dc supply.