Abstract
Epitaxial aluminum films in nano-scale thickness has been successfully grown on GaAs and Si substrates by using molecular beam epitaxy. The atomic force microscopy images show their smooth surface morphology while the X-ray diffractions reveal their excellent crystal quality. The normal-incident reflection spectra have been measured to investigate their optical properties in ultra-violet to near-infrared regime. Highly reflective aluminum has been demonstrated with a film thickness of only 40 nm. The spectra simulation fits the experimental results very well and the multiple reflections in the semi-transparent films play a key role for verifying the optical constants of aluminum.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call