Abstract
In this paper the method of manufacturing 100 /spl mu/m thin IGBT wafers is described. The key topic of new deposition processes reducing the bow of very thin wafers is discussed as well as improvements in equipment and wafer handling. These measurements are the basis to realize for the first time 600 V Non-Punch-Through IGBTs with their advantages of cost effective silicon material and a very good trade off relationship between on state voltage and turn off losses. At a similar on state voltage of about 2 V the turn off energy can be halved compared to a state of the art epi IGBT.
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