Abstract
Two preparation methods were employed to grow a well-ordered ultra-thin titanium oxide film on Mo(112). The first method consisted of growing the films by direct deposition of Ti by chemical vapor deposition, followed by oxidation. Better film quality was obtained by the second method which involved deposition of Ti onto monolayer SiO2/Mo(112), as described in our prior work. By using x-ray photoelectron spectroscopy, Ti was determined to be in +3 oxidation state.
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