Abstract
Well-ordered Mo(1 1 2)–(8 × 2)-TiO x films were grown on the Mo(1 1 2) surface. Two preparation methods, direct growth on the Mo(1 1 2) surface and indirect growth by deposition of Ti onto monolayer SiO 2/Mo(1 1 2), were used. The latter method was found to be more reproducible with respect to film quality as determined by low-energy electron diffraction and scanning tunneling microscopy. The well-ordered (8 × 2)-TiO x film, for which a structure is proposed, was determined to be 1 ML and the Ti to be in an oxidation state of +3 using Auger spectroscopy, high-resolution electron energy loss spectroscopy and X-ray photoelectron spectroscopy.
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