Abstract
In this paper, we have demonstrated that carbon contamination caused by a wafer exposure to clean room air induces the degradation of a gate oxide reliability, and we have improved a gate oxide reliability by using a closed system, where the oxidation is followed by an in-situ phosphorus doped polycrystalline Si (poly-Si) gate formation in the same furnace. Furthermore, in opened system, we have demonstrated the removal of the carbon contamination by using only O 3 gas ambient and O 3 gas ambient combined with IR lamp irradiation.
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