ULTRA THIN CHIPS STACKING ON TSV SILICON INTERPOSER USING BACK-TO-FACE TECHNOLOGY

Abstract

Chip-to-wafer stacking is a key enabling technology for 2.5D as well as for 3D with technological challenges driven by on one hand the increase of the die surface and the number of I/Os and on the other hand by the reduction of the vertical dimensions. In our integration, the chips are reported on a silicon interposer containing copper via-middle TSVs. Two different approaches have been considered to realize chip-to-wafer stacking with respectively 35 and 20 μm ultra-thin dies. The first one is the conventional flip chip (or Face-to-Face, F2F) integration based on Cu/SAC μ-pillar connections while the second is a less classical Back-to-Face (B2F) way based on the realization of a high topology RDL after bonding the chips face up on the silicon interposer using a polymer. This last architecture becomes more and more attractive with the reduction of the chip thickness to ultra-thin dimension and can offer substantial advantages in terms of design flexibility and technology cost. Chip bonding is one of the first tasks to address: several bonding materials have been tested either on die side using die attach film (DAF) or on bottom interposer side using wafer level spin coated polymers. Then a novel brick consisting of high topology encapsulation and metallization has been fully developed to connect the dies to the bottom wafer enabled by the development of a specific lithography process. Thermo-mechanical FEM simulation and first reliability assessment have been carried out and support the good mechanical behavior of this integration. Electrical tests have been also completed that allows comparing the performances of F2F and B2F interconnections in terms of resistances and yield at front side level but also at back side level after TSV exposure. Back to Face integration can be very attractive in terms of process complexity and cost for ultra-thin chips with limited I/Os counts.