Ultra-short channel junctionless transistor with a one-dimensional nanodot array floating gate

Abstract

The electrical properties of a junctionless field-effect transistor with a sub-10-nm scale channel and FeOx nanoparticles (NPs) were studied. The anisotropic wet etching of a silicon-on-insulator substrate was used to form V-grooves and define the nanometer-scale channel. The NPs were selectively placed on the bottom of the V-groove using the bio-nano process. Low-voltage operation and a wide threshold voltage (Vth) shift as memory behavior were confirmed in a device with a 3.6-nm channel length. These results indicate that the Vth is controlled by the single-nanodot floating gate along the channel length direction.