Abstract
Plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) was combined with the selective absorption modulation using SiO2 layer to form ultra-shallow p+/n junction. By depositing a controlled thickness of SiO2 layer on top of the silicon substrate, we were able to confirm the reduction of laser energy density by 400mJ/cm2 (29%) and the formation of ultra-shallow junction at 12.7nm (@1018cm−3) with Rs of 670Ω/sq., which demonstrated the high feasibility of this new method.
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