Ultra-Low Power 9T FinFET Based SRAM Cell for IoT Applications

Abstract

The rapid proliferation of Internet of Things (IoT) devices has escalated the demand for energy-efficient memory solutions. The development of SRAM (Static Random-Access Memory) has gathered significant attention, particularly for low-power applications and portable devices. This research introduces a novel approach to ensure robust performance and operational integrity, all while adhering to stringent power constraints amidst process and temperature fluctuations. This quest for alternative nano-devices has been ignited by the scaling and channel control challenges intrinsic to CMOS technology. Among the array of alternatives, including FinFETs, TFETs, and CNTFETs, FinFETs have emerged as strong contenders. FinFET SRAMs contribute to the ongoing drive for electronic devices to become more compact and energy-efficient. They offer a distinct advantage as a promising CMOS substitute, attributed to their high performance, stability, with low power consumption characteristics at the nanoscale. The study proposes an ultra-low power 9T FinFET based SRAM cell meticulously designed for IoT applications. Leveraging the unique attributes of FinFET based 9T cell, the proposed SRAM cell is tailored to achieving minimal power consumption while maintaining inherent stability. The study assesses the performance of the proposed SRAM cells for power dissipation, stability, speed, and energy efficiency, and compares them with existing SRAM structures. The results are obtained through the Monte Carlo simulation technique, which evaluates circuit performance under specified conditions. The study achieves remarkable efficiency gains with 9T SRAM cells compared to other configurations. Additionally, the reduced read and write access times facilitate expedited data retrieval and storage operations.