Abstract
We successfully demonstrated a hydrogen (H2)-passivated HfO2-based memristive device that operates with a low current that is below sub-nA in this paper. Gradual resistance changes are achieved with the diversification of the sweeping voltage. The H2-passivated HfO2-based memristive device shows an improvement of the device's performance of low power consumption with sub-nA, data retention for 104 s, and robust endurance of 106 repetitive cycles. The Spike Timing Dependent Plasticity (STDP) and the pattern recognition via MNIST are employed to assess the artificial neural network characteristics of the proposed device. A symmetrical curve on STDP is observed for an H2-passivated HfO2-based memristive device, which indicates that it can facilitate in order to mimic a human brain. The high accuracy of 91.12% and a clearer pattern recognition are obtained on an H2-passivated memristive device. Therefore, we believe that the H2-passivated HfO2-based memristive device opens up a new path in order to mimic the human brain with low power.
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