Abstract
A novel low on-resistance Schottky barrier diode (SBD) structure with a p-buried floating layer is proposed and demonstrated by fabricating 300V-SBDs using a burying epitaxial growth technique. The fabricated SBDs realize 50% reduction in chip area and show the possibility of a higher SBD blocking voltage of over 200 V thanks to the reduction of the on-resistance. This is the first paper describing fabrication of charge compensated SBDs.
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