Abstract
State-of-the-art performance has been achieved at W-band on a two-stage LNA low-noise amplifier) and on a single-ended active mixer fabricated using 0.15 mu m T-gate InP HEMT (high electron mobility transistor) devices. The LNA showed a 3-dB noise figure and 16.5 dB associated gain at the waveguide interface at 93 GHz. The active HEMT mixer has 2.4-dB conversion gain and 7.3-dB noise figure at 94 GHz RF and 85 GHz LO (local oscillator). At the same RF and LO frequencies, the complete downconverter showed 3.6-dB noise figure and 17.8-dB conversion gain at the waveguide input and output. >
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