Abstract
Abstract(Mg1 − xCax)2SiO4dense ceramics (x ≥ 0.15) were prepared, and their microwave dielectric characteristics were investigated together with the structure evolution. The sintering temperature for Mg2SiO4ceramics was reduced significantly with Ca2+substitution. (Mg1 − xCax)2SiO4ceramics exhibited a small increase in dielectric constant (εr) correlated with increased crystallite size, and ultra‐high quality factorQfvalue was achieved throughout the compositional range. Temperature coefficient of resonant frequency (τf) was considerably tuned from −70 ppm/°C to −33 ppm/°C, and this improvement was deeply linked with the decreased bond valance. At x = 0.075, (Mg1 − xCax)2SiO4ceramics exhibited the best combination of microwave dielectric characteristics:εr = 7.2,Qf = 199,800 GHz at 26 GHz,τf = −33 ppm/°C. The present ceramics could be expected as promising candidate of dielectric materials for millimeter wave applications.
Published Version
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