Abstract
This work presents methods of controlling the density of self-assembled CdTe quantum dots (QDs) grown by molecular beam epitaxy. Two approaches are discussed: increasing the deposition temperature of CdTe and the reduction of CdTe layer thickness. Photoluminescence (PL) measurements at low temperature confirm that both methods can be used for significant reduction of QDs density from 1010QD/cm2 to 107–108QD/cm2. For very low QDs density, identification of all QDs lines observed in the spectrum is possible.
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