Abstract
A set of monolithic L-band components operating at milliwatt and sub-milliwatt DC power consumptions have been designed and fabricated. A maximum gain/power quotient of 19.1 dB/mW was recorded for a monolithic amplifier at a frequency of 1.25 GHz with a cascade of 2 MMIC amplifiers yielding a total gain of 15.3 dB on a total power consumption of just 800 mu W. This is believed to be the highest gain/power quotient ever reported for a monolithic circuit at L-band. A four-pole voltage controlled filter with low-power amplifier gain stages showed a loss of 1.6 dB with 15% 3-dB bandwidth on a power consumption of 6.75 mW at 1.575 GHz. A subsystem containing the chips was assembled and tested. The ultra-low power consumptions were obtained with a standard foundry process using an enhancement-mode MESFET with a variety of design techniques. Yields obtained on two 4-in GaAs wafers were 96-100%.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Published Version
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