Ultra-high speed and low-power superlattice-like Sn18Sb82–SnSe2 thin films for phase change memory applications

Abstract

Superlattice-like Sn18Sb82–SnSe2 multiple thin films are systematically investigated for phase change memory application. The thin films have a preferable thermal stability owing to the wide bandgap, strong Sn–Se bond energy and the vacancies and local distortions existed in SnSe2. Besides, the variation in resistance of the film not only can lower the power consumption but also can facilitate device operation. Meanwhile, operating speed of the device based on specific [Sn18Sb82(2nm)–SnSe2(10nm)]4 thin film is dramatically increased, reaching 5ns compared with 100ns of traditional Ge2Sb2Te5. This high operating speed is mainly derived from the precipitated Sb phase and weak Sb–Sb, Se–Se bonds.