Abstract
In this paper, a symmetrical MIM tunnel junction diode with a novel material combination, vanadium–vanadium sequioxide–vanadium (V–V2O3–V) is fabricated and electrically characterized. Analysis of the measured current-voltage ([Formula: see text]–[Formula: see text] characteristics of the fabricated MIM diode revealed an ultra-high diode sensitivity of [Formula: see text]9.24[Formula: see text][Formula: see text] at an applied bias of [Formula: see text]0.104[Formula: see text]V. Based on the measured [Formula: see text]–[Formula: see text] characteristics, theoretical predictions were performed showing that the diode’s dynamic resistance can be tuned for matching to coupled antennas, in rectenna structures, whilst maintaining high levels of sensitivities using practically realizable V2O3 insulator thicknesses.
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