Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature

Abstract

<111>-β-SiC epilayers were prepared on <0001>-α(4H)-SiC by laser chemical vapor deposition at temperatures of 1390–1505K. Non-explosive and non-corrosive precursor (Hexamethyldisilane, HMDS, Si(CH3)3–Si(CH3)3) was used in non-H2 (Ar) atmosphere. The β-SiC films grew epitaxially with in-plane orientation relationship of β-SiC [2¯02]//α(4H)-SiC [1000] and β-SiC [022¯]//α(4H)-SiC [0100]. The deposition rates of the β-SiC films were 31–261μmh−1, which were significantly higher than those of conventional CVDs.