Abstract
ULSI quality silicon epitaxial films as thin as 0.6 μm have been grown using dichlorosilane at temperatures as low as 850°C and pressures as low as 10 torr in commercially available cylindrical epi reactors. Removal of the substrate surface native oxide by a 5 min hydrogen bake has been observed down to 850°C, 10 torr. In addition, very low defect levels and excellent device characteristics have been measured in the epitaxial films. The results were observed on both 125 and 200 mm substrates.
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