Abstract
Observations of so‐called stress‐induced voiding in Al lines for LSI have been made by ultrahigh voltage (2 MV) electron microscopy (UHVEM). For voiding in high temperature mode, in situ observations of voiding, as well as conventional observations of voided samples, revealed the effects of grain‐boundaries (GBs) on void growth and void shape. Some voids continued to grow after inducing line separation, resulting in bow‐shaped or trapezoidal voids. Shrinkage and disappearance of voids, although such seldom occurred, were also observed. For voiding in low temperature mode, line separations, resulting from growth of wedge‐shaped voids in fine lines, were observed. Mechanisms for voiding and observed phenomena for high temperature mode voiding are discussed.
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