Abstract
The growth of CaF 2 on Si (100) substrates of various qualities was studied for low and high temperature modes at an early growth stages. The growth of samples was carried out by MBE at growth temperature about ∼5000°C (low temperature mode) and about ∼7500°C (high temperature mode)‥ The surface morphology of the substrates and the grown structures was studied in semi contact mode with an ambient air Solver P47H NT-MDT atomic force microscope. It was found, that depending on the substrate surface morphology, either triangular shaped CaF 2 islands are formed on Si (100) or rectangular shaped CaF 2 islands are developed, leaving the most part of a substrate surface uncovered, for low temperature mode. While in high temperature mode on the both types of substrate rectangular shaped CaF 2 islands are formed, covering the substrate almost uniformly. In low temperature mode a substrate surface morphology strongly influences morphology of CaF 2 films defining formation of structure defects at an initial growth stage.
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