UHF/L Band Low-Noise Dual-Gate GaAs FETs

Abstract

Low-noise dual-gate GaAs MESFETs applicable to UHF/L band have been developed at NSR (Nanjing Solid State Devices Research) using multilayer GaAs grown by V.P.E. and a recessed-gate structure. For a plastic packaged device, an optimum noise figure of 0.7 dB and an associated gain of 20 dB at 1 GHz were measured, and for a metal-ceramic packaged device, the former was 0.9 dB and the latter was 15 dB at 2 GHz. It is predicated that these devices will be extensively applied to UHF TV receivers and L band communications and so forth.